Significant reduction of the microwave surface resistance of MgB2 films by surface ion milling
نویسندگان
چکیده
منابع مشابه
Energy gap, penetration depth, and surface resistance of MgB2 thin films determined by microwave resonator measurements
We have measured the temperature dependence of the microwave surface impedance Zs5Rs1ivm0l of two c-axis oriented MgB2 films employing dielectric resonator techniques. The temperature dependence of the magnetic-field penetration depth l determined by a sapphire dielectric resonator at 17.9 GHz can be well fitted from 5 K close to Tc by the standard BCS integral expression assuming the reduced e...
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Precision measurements of the microwave surface resistance Rs of in situ MgB2 films directly reveal an exponential behavior of Rs at low temperature indicating a fully-gapped order parameter. The entire temperature dependence of Rs is well described by a Mattis–Bardeen formalism, but with a small gap ratio of D(0)/kTc50.72, corresponding to D(0)51.9 meV. © 2002 American Institute of Physics. @D...
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The surface resistance of niobium nitride {NbN) thin films has been measured at 7. 78 and 10.14 GHz in the temperature range of 1.5 to 4.2 K. The films were reactively sputtered on sapphire substrates to a thickness of approximately 1 micron. The surface resistance was determined by measuring the quality factor (Q) of the TEo] 1 mode of a lead-plated copper cavity where the NbN served as one en...
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امروزه سالیتون ها بعنوان امواج جایگزیده ای که تحت شرایط خاص بدون تغییر شکل در محیط منتشر می-شوند، زمینه مطالعات گسترده ای در حوزه اپتیک غیرخطی هستند. در این راستا توجه به پدیده پراش گسسته، که بعنوان عامل پهن شدگی باریکه نوری در آرایه ای از موجبرهای جفت شده، ظاهر می گردد، ضروری است، زیرا سالیتون های گسسته از خنثی شدن پراش گسسته در این سیستم ها بوسیله عوامل غیرخطی بوجود می آیند. گسستگی سیستم عامل...
Fluxon dynamics in Li-Al codoped MgB2 by microwave surface resistance measurements
The magnetic-field-induced variations of the microwave surface resistance, Rs, have been investigated in ceramic Mg1−x(LiAl)xB2, with x in the range 0.1 ÷ 0.4. The measurements have been performed on increasing and decreasing the DC magnetic field, H0, at fixed temperatures. At low temperatures, we have observed a magnetic hysteresis in the Rs(H0) curves in all the investigated samples. On incr...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2001
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1418026